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Degradation of N Se ‐Free Blue‐Green ZnSe‐Based Light Emitting Diodes with Superlattice Miniband Hole Transport
Author(s) -
Gordeev N.Yu.,
Ivanov S.V.,
Novikov I.I.,
Shubina T.V.,
Ilinskaya N.D.,
Kopev P.S.,
Reuscher G.,
Waag A.,
Landwehr G.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1019::aid-pssb1019>3.0.co;2-g
Subject(s) - superlattice , optoelectronics , materials science , cladding (metalworking) , diode , light emitting diode , degradation (telecommunications) , doping , quantum well , optics , laser , composite material , physics , telecommunications , computer science
Degradation properties of p–i–n BeZnSe/Zn(Be,Cd)Se light emitting diodes (LEDs) are studied. It is shown that the use of undoped short‐period superlattices, providing efficient hole transport from p + ‐BeTe:N contact region (hole injector) to quantum well (QW) active region, instead of a p‐doped BeZnSe:N cladding layer results in significant enhancement of the LED lifetime (up to 16 h) at extremely large current densities (∼4.5 kA/cm 2 ) under cw room temperature conditions. The obtained results indicate a crucial role of N Se acceptors in the ZnSe‐based diode degradation and are practically independent of the stress induced by the QW.