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Be‐Chalcogenide Alloys for Improved R‐G‐B LEDs: Be x Zn y Cd 1–x–y Se on InP
Author(s) -
Maksimov O.,
Guo S.P.,
Tamargo M.C.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1005::aid-pssb1005>3.0.co;2-5
Subject(s) - chalcogenide , photoluminescence , molecular beam epitaxy , light emitting diode , materials science , band gap , diffraction , bowing , optoelectronics , epitaxy , optics , nanotechnology , physics , philosophy , theology , layer (electronics)
We report the molecular beam epitaxy growth and characterization of Be x Zn y Cd 1— x — y Se ( x ≤ 0.2) layers on InP substrates. Good optical properties and high crystalline quality were established using photoluminescence and X‐ray diffraction measurements. The dependence of the Be x Cd 1— x Se band gap energy on composition was investigated and fit to the quadratic equation: E g = 1.78(1 — x ) + 5.6 x — 2.6 x (1 — x ) with a bowing parameter of 2.6 eV. Our results indicate that Be x Zn y Cd 1— x — y Se is an attractive quantum well material for application in visible light emitters.