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Visible Light Emitting Diode with ZnCdSe/BeZnTe Superlattices as an Active Layer and MgSe/BeZnTe Superlattices as a p‐Cladding Layer
Author(s) -
Che S.B.,
Nomura I.,
Kikuchi A.,
Shimomura K.,
Kishino K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:2<1001::aid-pssb1001>3.0.co;2-t
Subject(s) - cladding (metalworking) , superlattice , materials science , optoelectronics , molecular beam epitaxy , light emitting diode , diode , layer (electronics) , fabrication , dislocation , active layer , current density , epitaxy , nanotechnology , composite material , thin film transistor , medicine , alternative medicine , physics , pathology , quantum mechanics
We report the fabrication and characterization of ZnCdSe/BeZnTe superlattices (SLs) visible LEDs which were grown on InP substrates by molecular beam epitaxy (MBE). Applying the MgSe/BeZnTe SL for a p‐cladding layer of the LED structure, the carrier confining effect was enhanced. The evaluation of the LEDs under pulsed current injections at room temperature (RT) resulted in observation of single peak emissions in the visible range, i.e. at 640 and 554 nm, corresponding to the different layer thickness combinations of the ZnCdSe/BeZnTe SLs active layers. A simple aging test of the LED was performed under the injection current density of 28 A/cm 2 . In spite of the higher dislocation density of the LED, in mid 10 5 cm —2 , a relatively longer lifetime over 130 h was confirmed.