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Mobility Limitations by Interface Scattering in Modulation‐Doped CdS/ZnSe Single Quantum Wells
Author(s) -
Dremel M.,
Grün M.,
Schmidt M.,
Klingshirn C.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<97::aid-pssb97>3.0.co;2-f
Subject(s) - van der pauw method , quantum well , heterojunction , materials science , electron mobility , doping , molecular beam epitaxy , scattering , condensed matter physics , charge carrier , optoelectronics , electrical resistivity and conductivity , hall effect , layer (electronics) , epitaxy , optics , nanotechnology , physics , laser , quantum mechanics
We examined the electrical properties of modulation‐doped CdS/ZnSe single quantum wells grown by molecular beam epitaxy. The n‐doping was performed in the ZnSe barrier material to realize a two‐dimensional electron gas (2DEG) in the CdS quantum well (QW). With van de Pauw and Hall bar measurements we determined the specific resistivity, the charge carrier density and the carrier mobility of the heterostructures. The strong dependence of the results of degenerately doped structures on the doping concentration and on the well thickness can be explained by a parallel layer conduction model. Limitations of the charge carrier mobility in these structures are due to scattering at the interface roughness and alloy disorder in the QW as well as ionic and piezo scattering in the doped layers.