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The Variation of Surface Leakage Current after Thermal Treatment for CdTe
Author(s) -
Choi Y.J.,
Oh K.N.,
Kim I.J.,
Kim Y.H.,
Yi Y.,
Kim S.U.,
Park M.J.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<79::aid-pssb79>3.0.co;2-7
Subject(s) - photoluminescence , materials science , annealing (glass) , cadmium telluride photovoltaics , raman scattering , wafer , analytical chemistry (journal) , thermal , exciton , raman spectroscopy , optoelectronics , optics , chemistry , condensed matter physics , composite material , thermodynamics , physics , chromatography
After CdTe wafers are polished mechanically and chemically, wider, narrower bands are observed at 1.4 and 1.54 eV by photoluminescence (PL), respectively. The samples are annealed in a vacuum evaporator before depositing the electrode. Thermal annealing depending on time duration and temperature shows a change of the ratio of I / I (A 0 , X) (intensity ratio of the bands to that of emission from excitons trapped by neutral acceptons). The PL intensity ratio of these bands is reduced by optimum annealing conditions. Raman scattering and I – V characteristics are also measured.