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Excitonic Emissions in ZnTe /GaAs Films Grown by Hot‐Wall Epitaxy
Author(s) -
Seto S.,
Mochida N.,
Inabe K.,
Suzuki K.,
Kuroda T.,
Minami F.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<587::aid-pssb587>3.0.co;2-t
Subject(s) - exciton , epitaxy , annealing (glass) , materials science , photoluminescence , acceptor , doping , gallium , vacancy defect , cadmium telluride photovoltaics , optoelectronics , thin film , analytical chemistry (journal) , chemistry , crystallography , condensed matter physics , nanotechnology , metallurgy , physics , layer (electronics) , chromatography
Excitonic PL emissions in high‐quality ZnTe epilayers grown on GaAs by hot‐wall epitaxy were investigated by their annealing behaviors and compared with PL emissions of Ga‐doped CdTe. The observed donor‐ and acceptor‐bound excitons were ascribed to gallium donors and to arsenic acceptors diffused from GaAs substrate, respectively. In addition to these bound excitons, an intense emission line was observed at 525.90 nm (2.3575 eV) in relatively thin ZnTe films of less than 6 μm. It was found from the PL spectrum change by annealing under Zn saturation that the 526.90 nm line is due to recombination from excitons trapped at defect complexes, probably Zn‐vacancy/Ga‐donor complexes.