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Optical Characterization of ZnSe‐Based Quantum Structures Fabricated by CH 4 /H 2 Reactive Ion Etching
Author(s) -
Makino H.,
Fukushi H.,
Yao T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<567::aid-pssb567>3.0.co;2-0
Subject(s) - blueshift , reactive ion etching , redshift , photoluminescence , etching (microfabrication) , materials science , spectroscopy , optoelectronics , quantum well , ion , quantum dot , chemistry , optics , nanotechnology , layer (electronics) , physics , astrophysics , laser , organic chemistry , quantum mechanics , galaxy
Reactive ion etching (RIE) induced damage in ZnSe and ZnCdSe/ZnSe single quantum well (SQW) wires have been studied by photoluminescence spectroscopy. For ZnSe wires, the RIE‐induced damage led to a drastic redshift of the near band edge emission peak and the appearance of donor–acceptor pair transitions. After wet etching significant changes disappeared, suggesting that the damage was localized near the etched surface and strongly affected the optical properties of the wire arrays. In the case of ZnCdSe/ZnSe SQW wires, the wire width below 60 nm showed a blueshift accompanied by a narrowing of the spectra due to lateral confinement effects. The systematic redshift observed in the wires between 60 and 200 nm disappeared after the wet etching. The damage induced at the side wall may be responsible for the redshift.