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Annealing‐Induced Changes in Electrical, Optical, and Magnetic Properties of Phosphorus Doped Bulk Zn 1–x Mn x Te
Author(s) -
Van Khoi Le,
Sawicki M.,
Dybko K.,
Domukhovski V.,
Story T.,
Dietl T.,
Jȩdrzejczak A.,
Kossut J.,
Gała̧zka R.R.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<53::aid-pssb53>3.0.co;2-a
Subject(s) - annealing (glass) , doping , materials science , photoluminescence , curie temperature , ferromagnetism , condensed matter physics , magnetic semiconductor , analytical chemistry (journal) , charge carrier density , optoelectronics , chemistry , metallurgy , physics , chromatography
We report on successful growth of heavily p‐type doped bulk Zn 1– x Mn x Te crystals. Free hole density as high as 10 19 cm –3 has been achieved by use of Zn 3 P 2 as a source of phosphorus acceptors and by post‐growth high pressure annealing. The latter proved to be of a vital importance, removing a strong compensation present in as‐grown materials. As a result, the annealed crystals exhibit a very bright green photoluminescence (λ ≈ 520 nm) at temperatures as high as 160 K. The annealed samples with hole concentration p > 2 × 10 18 cm –3 show a positive Curie‐Weiss temperature and open hysteresis curves, characteristic of a system with ferromagnetic correlations.