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Deep‐Level Transient Spectroscopy and Cathodoluminescence of CdSe/ZnSe QD Structures Grown on GaAs(100) by MBE
Author(s) -
Litvinov V.G.,
Kozlovsky V.I.,
Sadofyev Yu.G.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<513::aid-pssb513>3.0.co;2-#
Subject(s) - cathodoluminescence , deep level transient spectroscopy , optoelectronics , spectroscopy , materials science , transient (computer programming) , physics , luminescence , computer science , silicon , quantum mechanics , operating system
CdSe/ZnSe structures grown on n + ‐GaAs(100) by molecular beam epitaxy were studied by methods of deep‐level transient spectroscopy (DLTS) and cathodoluminescence (CL). In DLTS measurements, an unusual dependence of the activation energy for electron emission from CdSe layer levels on filling conditions was observed. This dependence was explained on basis of the interaction between electron charge in CdSe quantum dots (QD) and charged deep levels placed in ZnSe barriers. The existence of barriers for the electron capture by QDs was found also.