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Vapour Growth of ZnS x Se 1—x Single Crystals
Author(s) -
Korostelin Yu.V.,
Kozlovsky V.I.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<5::aid-pssb5>3.0.co;2-f
Subject(s) - homogeneity (statistics) , crystallite , materials science , annealing (glass) , wafer , crystallography , crystal growth , alloy , chemistry , nanotechnology , composite material , metallurgy , mathematics , statistics
Seeded chemical and physical vapour transport with H 2 and He, respectively, was used to grow twin‐free ZnS x Se 1— x ( x < 0.15) single crystals with diameter of 50–55 mm and height up to 15 mm. Use of a source with polycrystalline ZnSSe having a composition gradient along the furnace axis, allowed to improve the homogeneity of alloy composition. The change of x per 1 cm along the growth direction in the grown crystals was as small as 1.5%. The etch pit density was (3–5) × 10 4 cm —2 . Specific resistance of ZnSSe wafers was decreased up to 0.06 Ω cm by annealing in liquid Zn:Al.