Premium
Influence of Capping Conditions on CdSe/ZnSe Quantum Dot Formation
Author(s) -
Passow T.,
Leonardi K.,
Heinke H.,
Hommel D.,
Seufert J.,
Bacher G.,
Forchel A.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<497::aid-pssb497>3.0.co;2-t
Subject(s) - molecular beam epitaxy , quantum dot , photoluminescence , materials science , exciton , optoelectronics , spectroscopy , epitaxy , layer (electronics) , condensed matter physics , nanotechnology , physics , quantum mechanics
CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time‐resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons are localized only at temperatures below 100 K. In contrast, real quantum dot formation occurs using migration enhanced epitaxy for overgrowth of CdSe by ZnSe.