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Interface Effects in Type‐II CdSe/BeTe Quantum Dots
Author(s) -
Shubina T.V.,
Ivanov S.V.,
Toropov A.A.,
Sorokin S.V.,
Lebedev A.V.,
Kyutt R.N.,
Solnyshkov D.D.,
Pozina G.R.,
Bergman J.P.,
Monemar B.,
Willander M.,
Waag A.,
Landwehr G.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<489::aid-pssb489>3.0.co;2-p
Subject(s) - quantum dot , photoluminescence , condensed matter physics , symmetry (geometry) , electron , type (biology) , polarization (electrochemistry) , physics , materials science , chemistry , optoelectronics , quantum mechanics , geometry , geology , paleontology , mathematics
We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple‐layer structures containing self‐assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type‐II transitions involving deeply localized electron states. Large linear in‐plane polarization of the PL (up to 80%) is observed, implying the C 2v (or lower) symmetry of the individual places of the electron localization.