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Photoluminescence Studies of the Formation of MgS/CdSe Quantum Dots Grown by Molecular Beam Epitaxy
Author(s) -
Funato M.,
Bradford C.,
Balocchi A.,
Smith J.M.,
Prior K.A.,
Cavenett B.C.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<477::aid-pssb477>3.0.co;2-0
Subject(s) - molecular beam epitaxy , photoluminescence , quantum dot , materials science , optoelectronics , monolayer , spectroscopy , quantum well , epitaxy , nanotechnology , optics , layer (electronics) , physics , laser , quantum mechanics
The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 monolayers results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by Stranski‐Krastanov growth. The PL temperature dependence measurements show clear difference in the optical properties of QWs and QDs.