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Detection of Lattice Match between ZnS x Se 1–x Epilayers and GaAs Substrates by Polarisation Raman Spectroscopy
Author(s) -
Quang Liem Nguyen,
Xuan Thanh Do,
Xuan Quang Vu,
Van Hong Le
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<47::aid-pssb47>3.0.co;2-p
Subject(s) - raman spectroscopy , raman scattering , phonon , plasmon , materials science , spectroscopy , lattice (music) , condensed matter physics , scattering , optoelectronics , optics , physics , quantum mechanics , acoustics
Nearly lattice‐matched ZnS x Se 1— x (0 ≤ x < 0.1) grown heteroepitaxially on (001) GaAs substrates was studied by Raman spectroscopy. We observed clearly Raman scattering on the plasmon–longitudinal optical (LO) phonon coupled mode at the GaAs side of the ZnS x Se 1— x –GaAs interfacial region under suitably polarised exciting light, i.e. light with electric field perpendicular to the [110] crystallographic axis. By the systematical study of Raman scattering on the coupled mode as a function of S substitution we found a clear correlation between the plasmon–LO phonon coupling strength and the lattice match. At the well‐matched grown epilayer, ZnS 0.06 Se 0.94 , the Raman scattering on the plasmon–LO phonon coupled mode appears to be strongest.