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The Effect of Upper Barrier Layer Growth on Self‐Assembled CdSe Quantum Dots
Author(s) -
Murase Y.,
Maehashi K.,
Hanada T.,
Hirotsu Y.,
Nakashima H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<457::aid-pssb457>3.0.co;2-8
Subject(s) - quantum dot , transmission electron microscopy , photoluminescence , materials science , layer (electronics) , atomic force microscopy , barrier layer , diffusion barrier , nanotechnology , diffusion , optoelectronics , physics , thermodynamics
We have investigated the effect of upper barrier layer growth on self‐assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non‐uniform two‐dimensional CdSe islands. The alloying layer is observed by cross‐sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self‐assembled CdSe QDs reveal the existence of a non‐uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.