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Attempts of Homo p–n Junction Formation in ZnS by Impurity Co‐Doping with Vapor Phase Epitaxy
Author(s) -
Kishimoto S.,
Kato A.,
Naito A.,
Sakamoto Y.,
Iida S.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<391::aid-pssb391>3.0.co;2-k
Subject(s) - epitaxy , vapor phase , doping , materials science , impurity , band gap , diode , phase (matter) , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , physics , layer (electronics) , organic chemistry , chromatography , thermodynamics
ZnS p–n homo junctions have been obtained for the first time with epitaxially grown layers having the structures of n‐ZnS:In/p‐ZnS:In, Ag, N/p‐GaAs and p‐ZnS:In, Ag, N/n‐ZnS:In/n‐GaAs. Both of these structures showed rectifying behavior which is expected for p–n junctions. The forward voltage of 3.7 V where current increases rapidly corresponds to the band gap energy of ZnS at room temperature. For reverse bias, some samples having p‐ZnS:In, Ag, N/n‐ZnS:In/n‐GaAs structure showed backward diode type character.