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Molecular Beam Epitaxy of Al Doped n‐ZnSe
Author(s) -
Takai T.,
Chang J.H.,
Godo K.,
Hanada T.,
Yao T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<381::aid-pssb381>3.0.co;2-o
Subject(s) - molecular beam epitaxy , crystallinity , materials science , doping , substrate (aquarium) , electrical resistivity and conductivity , optoelectronics , epitaxy , analytical chemistry (journal) , chemistry , nanotechnology , composite material , layer (electronics) , oceanography , engineering , chromatography , geology , electrical engineering
Molecular beam epitaxy of Al doped n‐type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined. The electrical, optical and structural properties of ZnSe : Al layers are investigated. ZnSe : Al layers show high electron concentration of 8.37 × 10 18 cm —3 with low electrical conductivity of 6.92 × 10 —3 Ω cm along with high crystallinity.