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Silver Doped p‐Type ZnS Crystals
Author(s) -
Butkhuzi T.V.,
Tchelidze T.G.,
Chikoidze E.G.,
Kekelidze N.P.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<365::aid-pssb365>3.0.co;2-g
Subject(s) - doping , electrical resistivity and conductivity , acceptor , materials science , crystal (programming language) , atom (system on chip) , ion , recoil , conductivity , analytical chemistry (journal) , chemistry , optoelectronics , atomic physics , condensed matter physics , electrical engineering , engineering , organic chemistry , chromatography , computer science , embedded system , programming language , physics
Thermodynamic analyses for the system ZnS:Ag (crystal)–S 2 (vapor) is performed. It turned out that it is impossible to receive hole conductivity in this system. In our experiment ZnS crystals covered by silver layer are silver doped by the mechanism of atom recoil during S + ion implantation. The resistivity of obtained p‐type layers is 10 2 –10 3 Ω cm. The activation energy of acceptor is determined to be 0.3 eV. In the PL spectra of p‐type samples λ = 454 and 520 nm bands are observed and identified.