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High Temperature Electrical Conductivity in Cu‐Doped ZnS
Author(s) -
Lott K.,
Türn L.,
Volobujeva O.,
Leskelä M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<361::aid-pssb361>3.0.co;2-w
Subject(s) - electrical resistivity and conductivity , materials science , doping , analytical chemistry (journal) , thermal conduction , solubility , conductivity , zinc , high pressure , mineralogy , thermodynamics , chemistry , metallurgy , composite material , physics , optoelectronics , chromatography , electrical engineering , engineering
High temperature electrical conductivity (HTEC) was measured and high temperature defect equilibrium (HTDE) was analysed in ZnS:Cu to study the conditions for making p‐type material. In the high zinc vapour pressure ( p Zn ) region, the Cu solubility limit determines the composition of phases coexisting with ZnS crystal. The negative slope of the HTEC isotherm in this region is caused by the chemical outdiffusion of Cu. The high p Zn and the high sulfur vapour pressure ( p S 2) regions are characterized by dominant donors. At high p S 2antistructural disorder and its associates are introduced into the HTDE model. At low p Zn or p S 2values, the reverse sign of the isotherm slope can be explained by two‐carrier conduction, and in this region p‐type HTEC may be formed.