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Defect Formation in Heterovalent ZnSe/GaAs Epitaxy: Theoretical Study
Author(s) -
Nakayama T.,
Kobayashi R.,
Sano K.,
Murayama M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<311::aid-pssb311>3.0.co;2-f
Subject(s) - epitaxy , materials science , crystallography , condensed matter physics , optoelectronics , chemistry , nanotechnology , layer (electronics) , physics
Monte Carlo simulations were performed to study the defect formation in ZnSe/GaAs heterovalent epitaxy. It was shown that when ZnSe is grown on the GaAs (001) As‐rich c(4 × 4) surface, As antisites become the origin of defects such as dislocations, while ZnSe grows in a step‐flow manner on the GaAs (110) (1 × 2) surface without any sign of defect production. These results originate from the heterovalency between ZnSe and GaAs and well explain the observations.