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Diffusion Profiles of Se in Bulk ZnTe
Author(s) -
Kobayashi M.,
Terakado H.,
Sawada R.,
Arakawa A.,
Sato K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<265::aid-pssb265>3.0.co;2-k
Subject(s) - materials science , alloy , diffusion , ternary operation , reciprocal lattice , crystal (programming language) , analytical chemistry (journal) , crystallography , metallurgy , chemistry , optics , thermodynamics , diffraction , physics , chromatography , computer science , programming language
Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM‐EDS and X‐ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H 2 carrier gas have resulted in the degradation of the bulk ZnTe region.