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Conductivity Control in Nitrogen‐Doped p‐Zn 1‐x Mn x Te and Magneto‐Transport Properties
Author(s) -
Nam K.T.,
Watanabe N.,
Kuroda S.,
Takita K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<261::aid-pssb261>3.0.co;2-#
Subject(s) - dopant , magnetoresistance , electrical resistivity and conductivity , analytical chemistry (journal) , materials science , polaron , nitrogen , doping , conductivity , magneto , condensed matter physics , magnetic semiconductor , magnetic field , chemistry , physics , electron , optoelectronics , quantum mechanics , combustion , organic chemistry , chromatography
p‐doped Zn 1– x Mn x Te films were grown by MBE with nitrogen plasma as a dopant source. The highest hole concentration, which attained 4.5 × 10 20 cm –3 in ZnTe, exhibited decreasing tendency with the Mn composition x , but it kept the order of 10 19 cm –3 in the range of x < 0.1. In Zn 1– x Mn x Te with p = 1.5 – 4.8 × 10 19 cm –3 , the temperature dependence of the resistivity exhibited insulating behavior. In the magneto‐transport measurement, a large negative magnetoresistance (MR) was observed at low temperatures below 4.2 K. This was attributed to the localization of holes due to the magnetic polaron formation at zero field and its release under magnetic fields.