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Self‐Compensation of the Phosphorus Acceptor in ZnSe
Author(s) -
Seghier D.,
Gislason H.P.,
Morhain C.,
Teisseire M.,
Tournié E.,
Neu G.,
Faurie J.P.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<251::aid-pssb251>3.0.co;2-3
Subject(s) - metastability , acceptor , photoluminescence , deep level transient spectroscopy , photoconductivity , materials science , binding energy , spectroscopy , doping , valence (chemistry) , optoelectronics , analytical chemistry (journal) , photochemistry , chemistry , silicon , atomic physics , condensed matter physics , physics , organic chemistry , quantum mechanics , chromatography
ZnSe epilayers doped with plasma‐activated phosphorus have been investigated by means of optical and electrical measurements. It is found that P Se forms a shallow acceptor with binding energy of 85 meV which is identified in the optical emission spectra. In these samples we also observe an energy level near 90 meV from the valence band using deep level transient spectroscopy. We assign it to the P Se acceptor identified in photoluminescence. Also, deeper levels were observed with binding energies up to 450 meV. Some of them are metastable and give rise to persistent photoconductivity. We discuss their relevance taking into account that all samples investigated in the study were highly resistive.