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Properties of MBE‐Grown ZnBeSe: Study of Be Isoelectronic Traps and of Dopant Behavior
Author(s) -
Kuskovsky I.L.,
Gu Y.,
van der Voort M.,
Tian C.,
Kim B.,
Herman I.P.,
Neumark G.F.,
Guo S.P.,
Maksimov O.,
Tamargo M.C.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<239::aid-pssb239>3.0.co;2-g
Subject(s) - dopant , photoluminescence , impurity , doping , acceptor , binding energy , materials science , analytical chemistry (journal) , chemistry , chemical physics , atomic physics , condensed matter physics , optoelectronics , environmental chemistry , physics , organic chemistry
In this paper we present studies on undoped, Cl‐doped, and N‐doped ZnBeSe using photoluminescence (PL). We show that the dominant PL from undoped samples is “effective mass” type and suggest that it is of isoelectronic origin. We also show that the binding energy of both donor and acceptor impurities increases with Be concentration.