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Optimization of Pretreatment of GaP Substrates for Molecular Beam Epitaxy of ZnS‐Based Materials
Author(s) -
Ichino K.,
Nishikawa T.,
Kawakami F.,
Kosugi T.,
Kitagawa M.,
Kobayashi H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<217::aid-pssb217>3.0.co;2-w
Subject(s) - molecular beam epitaxy , epitaxy , materials science , irradiation , nucleation , optoelectronics , oxide , crystallography , nanotechnology , layer (electronics) , chemistry , metallurgy , organic chemistry , physics , nuclear physics
Abstract We have investigated pretreatment conditions of GaP substrates for molecular beam epitaxy of ZnS‐based materials. Oxide removal of GaP substrates was carried out with or without irradiation of P or/and Zn molecular beams under S‐free environment. The effects of the beam irradiation and the growth temperature on the initial growth mode and crystalline quality of ZnS epitaxial layers were studied. It was shown that the ZnS epitaxial layers grown on the P‐ and Zn‐irradiated substrates at the growth temperatures of 350–450 °C show quasi‐two‐dimensional nucleation and good crystalline quality.