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High Resolution Transmission Electron Microscope Analysis of CdSe/ZnSe Strained Layer Superlattices Grown on InP
Author(s) -
Nabetani Y.,
Kobayashi Y.,
Kato T.,
Matsumoto T.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<209::aid-pssb209>3.0.co;2-s
Subject(s) - superlattice , transmission electron microscopy , materials science , diffraction , high resolution transmission electron microscopy , layer (electronics) , electron microscope , spectral line , lattice (music) , electron diffraction , crystallography , electron , optoelectronics , optics , condensed matter physics , chemistry , nanotechnology , physics , astronomy , acoustics , quantum mechanics
The lattice structure of CdSe/ZnSe strained layer superlattices grown on InP is investigated by cross‐sectional high resolution electron microscopy. The Cd composition is obtained by lattice image analysis. The Cd composition is modulated along the growth direction. A gradual change of Cd composition is shown at the CdSe/ZnSe interface. The strain energy calculation shows that the formation of a ZnCdSe layer at the interface almost relieves the strain. X‐ray diffraction spectra are simulated using the obtained modulation profile of Cd composition. The simulated results well reproduce experimentally observed spectra.