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Growth and Characterization of ZnMgSe Alloys and ZnSe/ZnMgSe Multi‐Quantum Wells
Author(s) -
Zhang B.P.,
Manh L.H.,
Wakatsuki K.,
Segawa Y.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<197::aid-pssb197>3.0.co;2-4
Subject(s) - molecular beam epitaxy , photoluminescence , quantum well , exciton , phonon , materials science , reflection (computer programming) , characterization (materials science) , condensed matter physics , spectral line , optoelectronics , beam (structure) , epitaxy , optics , physics , nanotechnology , layer (electronics) , astronomy , computer science , programming language , laser
ZnMgSe alloys and ZnSe/ZnMgSe multi‐quantum well (MQW) structures were grown on GaAs (001) substrates by solid‐source molecular beam epitaxy (MBE). It was found that the content of Mg in ZnMgSe alloys can be well controlled by adjusting the beam fluxes of element sources. X‐ray reflection spectra from MQWs revealed strong satellite peaks, indicating good structural quality. Due to the quantum confinement effect, the photoluminescence (PL) peaks from the MQWs were shifted with variation in well width. Small Stokes shifts were identified between the transition energies observed by PL and reflectance. The interaction between excitons and LO phonons in ZnSe/ZnMgSe MQWs was greatly reduced compared with that in ZnSe bulk.