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Molecular Beam Epitaxy of Low‐Strained CdSe/CdMgSe Heterostructures on InAs(001) Substrates
Author(s) -
Kaygorodov V.A.,
Sedova I.V.,
Sorokin S.V.,
Sitnikova A.A.,
Nekrutkina O.V.,
Shubina T.V.,
Toropov A.A.,
Sorokin V.S.,
Ivanov S.V.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<19::aid-pssb19>3.0.co;2-j
Subject(s) - molecular beam epitaxy , heterojunction , photoluminescence , nucleation , materials science , transmission electron microscopy , band gap , quantum dot , optoelectronics , electron diffraction , stacking , diffraction , epitaxy , crystallography , chemistry , nanotechnology , optics , layer (electronics) , physics , organic chemistry
CdSe/CdMgSe quantum well heterostructures have been grown on InAs(001) substrates by molecular beam epitaxy. Their optical and structural properties are studied by photoluminescence, transmission electron microscopy (TEM), electron probe microanalysis and X‐ray diffraction. A comparative analysis of two types of heterovalent III–V/II–VI interfaces (InAs/CdSe and InAs/ZnTe) and their effect on the structural properties of CdMgSe layers are discussed. Structures with the InAs/ZnTe interface exhibit a much lower stacking fault density (below the TEM detection limit of 10 6 cm —2 ) as compared to those with the InAs/CdSe interface, which is explained by the high probability of In 2 Se 3 nucleation at the latter interface. The CdMgSe energy gap versus composition dependence as well as the optical bowing parameter and the zinc‐blende MgSe band‐gap energy are determined.