Premium
Technology and Characterization of Single‐Crystalline Substrates Made of ZnSe‐Based Wide‐Gap II–VI Semiconductor Compounds
Author(s) -
Mycielski A.,
Szadkowski A.J.,
Kowalczyk L.,
Zieliński M.,
Łusakowska E.,
Witkowska B.,
Kaliszek W.,
Jȩdrzejczak A.,
Adamczewska J.,
Kaczor P.,
Chernyshova M.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<189::aid-pssb189>3.0.co;2-0
Subject(s) - ampoule , semiconductor , materials science , crystal twinning , characterization (materials science) , substrate (aquarium) , oxygen , crystal growth , single crystal , crystallography , quartz , crystal (programming language) , optoelectronics , nanotechnology , chemistry , composite material , microstructure , organic chemistry , geology , computer science , oceanography , programming language
Detrimental role of traces of oxygen in the growth process of the ZnSe‐based wide‐gap II–VI semiconductor crystals is emphasized. Adhesion, enhanced by the presence of oxygen, of the growing crystal to the walls of the quartz ampoule promotes generation of twinning and dislocations. The technology of the substrate‐quality crystals, which ensures nearly complete removal of oxygen, is described. The results of characterization of the obtained large (25 mm diameter), twin‐free single crystals of ZnSe, and substrate plates are presented.