Premium
MOCVD Growth of ZnSe/ZnS Distributed Bragg Reflectors on ZnSe(100) and GaAs(100) Substrates
Author(s) -
Kuznetsov P.I.,
Jitov V.A.,
Zakharov L.Yu.,
Yakushcheva G.G.,
Korostelin Yu.V.,
Kozlovsky V.I.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<171::aid-pssb171>3.0.co;2-#
Subject(s) - metalorganic vapour phase epitaxy , optoelectronics , materials science , optics , epitaxy , nanotechnology , physics , layer (electronics)
The possibility to increase the reflectivity of ZnS/ZnSe distributed Bragg reflectors (DBR) grown on GaAs(100) and ZnSe(100) substrates was studied by using metallorganic chemical vapour deposition (MOCVD) technique. As a result of growth optimization, a maximum reflectivity of the DBR mirror on GaAs substrate as high as 99% was achieved at a wavelength of 478 nm. The maximum reflectivity of the 20‐pair ZnS/ZnSe DBR stack on transparent ZnSe substrate was 91% at wavelength of 495 nm while the transmission coefficient was 5% at maximum reflectivity. Scattering by surface roughness limited the increase of the ZnS/ZnSe DBR mirror reflectivity in this case. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror showed intense low temperature cathodoluminescence.