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Chemical Self‐Diffusion in CdTe
Author(s) -
Grill R.,
Turjanska L.,
Franc J.,
Belas E.,
Turkevych I.,
Höschl P.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<161::aid-pssb161>3.0.co;2-3
Subject(s) - diffusion , stoichiometry , cadmium telluride photovoltaics , thermal conduction , materials science , chemistry , analytical chemistry (journal) , thermodynamics , nanotechnology , physics , chromatography , composite material
High‐temperature in‐situ galvanomagnetic measurements on CdTe are performed at temperatures T = 500–700 °C in the interval of Cd pressures ( P Cd ) one order of magnitude below and above the ideal stoichiometry line. The time evolution of samples after step‐like change of P Cd is analyzed and the chemical diffusion coefficient D = 5 exp (–1.12 eV/ k B T ) (cm 2 /s) is evaluated. Neither magnitude of P Cd nor direction of the step of P Cd (increased/decreased) have manifested a distinguishable effect on D . Surface conduction below 600 °C dependent on P Cd is reported.