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Collective Dimer Stress Induced Dichroism in II–VI Semiconductors
Author(s) -
BalderasNavarro R.E.,
Bonanni A.,
Montaigne Ramil A.,
Sitter H.,
Stifter D.,
Hingerl K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<155::aid-pssb155>3.0.co;2-s
Subject(s) - condensed matter physics , semiconductor , degeneracy (biology) , anisotropy , dimer , stress (linguistics) , dielectric function , spectroscopy , materials science , plane (geometry) , dielectric , physics , molecular physics , optics , nuclear magnetic resonance , quantum mechanics , mathematics , optoelectronics , geometry , bioinformatics , linguistics , philosophy , biology
The physical origin of sharp resonances in reflectance difference spectroscopy data at the critical points of the dielectric function of bulk semiconductors is shown to arise from an uniaxial in‐plane stress component. These resonances are induced at the critical points via lifting the degeneracy of the optical transitions at the L and Γ points due to the resulting anisotropic strain.