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Growth and Deep Level Characterisation of Undoped High Resistivity CdTe Crystals
Author(s) -
Zha M.,
Gombia E.,
Bissoli F.,
Zappettini A.,
Zanotti L.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<15::aid-pssb15>3.0.co;2-6
Subject(s) - electrical resistivity and conductivity , impurity , cadmium telluride photovoltaics , materials science , stoichiometry , doping , mineralogy , optoelectronics , chemistry , electrical engineering , engineering , organic chemistry
High resistivity CdTe crystals were grown by Bridgman and by physical vapour transport techniques without intentional doping. Novel synthesis and pre‐growth treatment procedures were developed for controlling background impurities concentration and stoichiometry of the source material. A detailed characterisation of the deep levels responsible for the high resistivity behaviour is reported.