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Preparation of CdTe Quantum Structures on ZnTe by Hot‐Wall Epitaxy
Author(s) -
Kouga K.,
Yoneyama R.,
Kuwabara H.,
Watanabe T.,
Tomoda W.,
Tatsuoka H.,
Nakanishi Y.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<149::aid-pssb149>3.0.co;2-g
Subject(s) - cadmium telluride photovoltaics , epitaxy , materials science , optoelectronics , layer (electronics) , atomic layer epitaxy , deposition (geology) , thin film , nanotechnology , geology , paleontology , sediment
The formation of quantum structure of CdTe on ZnTe is investigated. Thin CdTe layers were deposited by hot‐wall epitaxy. The thickness of CdTe layer was precisely controlled by alternate deposition of Cd and Te in an auto regulated manner. It is shown that the CdTe quantum structure is appreciably improved by depositing CdTe on thermally annealed ZnTe. We found as experimental result the ripening of CdTe surface.