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Luminescent Properties of Sb Doped CdTe Grown by Hot‐Wall Epitaxy
Author(s) -
Kanie H.,
Ogino K.,
Kuwabara H.,
Tatsuoka H.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<145::aid-pssb145>3.0.co;2-w
Subject(s) - photoluminescence , cadmium telluride photovoltaics , epitaxy , doping , annealing (glass) , luminescence , materials science , vacancy defect , acceptor , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , nanotechnology , condensed matter physics , metallurgy , physics , layer (electronics) , chromatography
Sb‐doped CdTe layers are grown by hot‐wall epitaxy and their photoluminescence (PL) properties are investigated. The ionization energy of the Sb acceptor is estimated as 57 meV. Thermal annealing effects on the PL spectra are also investigated and the electronic state of Sb is found strongly affected by the presence of Cd vacancy.