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Discrete Mosaic “Spread” at the Surface of ZnSe Layers on GaAs(001)
Author(s) -
Weigand W.,
Kumpf C.,
Sokolowski M.,
Bader A.,
Schumacher C.,
Möginger A.,
Faschinger W.,
Molenkamp L.W.,
Umbach E.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<117::aid-pssb117>3.0.co;2-#
Subject(s) - mosaic , surface (topology) , materials science , crystallography , mathematics , chemistry , geometry , geography , archaeology
Thin pseudomorphic ZnSe films can be grown by molecular beam epitaxy on GaAs(001) up to a layer thickness of about 100 nm. Above this critical thickness the topmost layers relax by forming large mosaic‐domains which are tilted by ≈ 0.2° with respect to the macroscopic surface. This is evidenced by satellites arising in discrete directions close to the fundamental diffraction spots in high resolution low energy electron diffraction (SPA‐LEED). Energy dependent SPA‐LEED measurements were performed to characterize the satellites and identify their origin. High resolution X‐ray diffraction (HRXRD) experiments indicate that this mosaicity is restricted to a near‐surface region and does not penetrate deeply into the bulk of the ZnSe film.