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Growth and Characterization of Large Diameter ZnTe Single Crystals
Author(s) -
Arakawa A.,
Asahi T.,
Sato K.
Publication year - 2002
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200201)229:1<11::aid-pssb11>3.0.co;2-u
Subject(s) - materials science , dislocation , electrical resistivity and conductivity , dopant , indium , evaporation , crystal (programming language) , crystal growth , analytical chemistry (journal) , range (aeronautics) , crystallography , doping , optoelectronics , composite material , chemistry , physics , chromatography , computer science , electrical engineering , thermodynamics , programming language , engineering
ZnTe crystals of 80 mm diameter were grown in melt by the vertical gradient freezing (VGF) method. B 2 O 3 was used to prevent evaporation of Zn and Te during the crystal growth. The mean dislocation density of the grown crystals was about 4000–7000 cm —2 . The lowest dislocation density was found to be less than 2000 cm —2 . Hole concentrations of more than 10 18 cm —3 were obtained using ZnP 2 as a dopant. When the indium concentration in ZnTe was 2.9 × 10 18 cm —3 , the resistivity was around 1 × 10 8 Ω cm. Thus, high quality large‐diameter single crystals covering a wide range of resistivity were obtained.