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The Effect of Magnetic Atom Substitution on the Tunneling Conductance in Skutterudite CoSb 3 Semiconductors
Author(s) -
Nagao J.,
Ebinuma T.,
Uchida T.,
Takeya S.,
Ferhat M.,
Hatta E.,
Mukasa K.,
Anno H.,
Matsubara K.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200112)228:3<705::aid-pssb705>3.0.co;2-k
Subject(s) - condensed matter physics , skutterudite , quantum tunnelling , conductance , materials science , oxide , atom (system on chip) , chemistry , physics , thermal conductivity , thermoelectric materials , computer science , metallurgy , composite material , embedded system
Electron tunneling experiments were performed on n‐Co 0.9 Ni 0.1 Sb 3 –Al oxide–Al junctions measured at 4.2 K. A V‐shape tunneling conductance curve with small zero bias offset is observed, which can be associated with disorder states. Comparing with the results on p‐Co 0.9 Fe 0.1 Sb 3 samples, it has been clarified that the Fe substitution leads to a stronger three‐dimensional disorder state as compared to the case of Ni substitution. Magnetic susceptibility measurements suggest that the observed three‐dimensional disorder state is mainly magnetic in nature.