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Impurity States in a Weakly Prolate (Oblate) Ellipsoidal Microcrystal Placed in a Magnetic Field
Author(s) -
Dvoyan K.G.,
Kazaryan E.M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200112)228:3<695::aid-pssb695>3.0.co;2-p
Subject(s) - oblate spheroid , prolate spheroid , impurity , condensed matter physics , ellipsoid , magnetic field , semiconductor , rotation (mathematics) , physics , magnetic impurity , atomic physics , classical mechanics , quantum mechanics , geometry , mathematics , astronomy
The variational method is used in the framework of perturbation theory, to analyse the impurity states in a weakly oblate (or prolate) semiconductor microcrystal, in the presence of a magnetic field directed along the rotation axis of the sample. For the GaAs semiconductor microcrystal, the dependence of the electronic energy states on the sample dimensions, ellipticity and magnetic field strength is obtained.