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Energy Relaxation by Warm Two‐Dimensional Electrons in a GaN/AlGaN Heterostructure
Author(s) -
Stanton N.M.,
Kent A.J.,
Cavill S.A.,
Akimov A.V.,
Lee K.J.,
Harris J.J.,
Wang T.,
Sakai S.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<607::aid-pssb607>3.0.co;2-i
Subject(s) - heterojunction , materials science , relaxation (psychology) , condensed matter physics , atmospheric temperature range , electron , phonon , range (aeronautics) , fermi gas , atomic physics , optoelectronics , physics , psychology , social psychology , quantum mechanics , composite material , meteorology
The rate of energy loss per electron, P e , by a two‐dimensional electron gas in an GaN/AlGaN heterostructure has been measured as a function of electron temperature, T e , in the range 0.4–35 K. A combination of zero and high magnetic field electrical transport measurements were used to determine T e as a function of the power dissipated in the device. It was found that P e ∝ T e n , with n ≈ 5 at the lowest temperatures, T e ≪ 2 K, while for higher temperatures, T e >10 K, n → 1. The experimental results are compared with numerical calculations of the energy relaxation rate. In the range of temperatures studied, emission of piezoelectrically coupled acoustic phonons was found to be the dominant energy relaxation mechanism.