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Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy
Author(s) -
Kitamura T.,
Ishida Y.,
Shen X.Q.,
Nakanishi H.,
Chichibu S.F.,
Shimizu M.,
Okumura H.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<599::aid-pssb599>3.0.co;2-f
Subject(s) - molecular beam epitaxy , heterojunction , materials science , characterization (materials science) , optoelectronics , radio frequency , plasma , hall effect , electrical resistivity and conductivity , electron mobility , epitaxy , nanotechnology , electrical engineering , physics , telecommunications , computer science , layer (electronics) , engineering , quantum mechanics
We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C‐SiC substrates by radio‐frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm 2 /Vs was obtained at room temperature, and it drastically increased to 7330 cm 2 /Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two‐dimensional electron gas.