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Simultaneous Impurity‐Band and Interface Conduction in Depth‐Profiled n‐GaN Epilayers
Author(s) -
Mavroidis C.,
Harris J.J.,
Lee K.,
Harrison I.,
Ansell B.J.,
Bougrioua Z.,
Moerman I.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<579::aid-pssb579>3.0.co;2-n
Subject(s) - materials science , sapphire , metalorganic vapour phase epitaxy , impurity , doping , optoelectronics , conduction band , epitaxy , thermal conduction , heterojunction , electrical resistivity and conductivity , layer (electronics) , electron , optics , chemistry , nanotechnology , laser , electrical engineering , composite material , physics , organic chemistry , quantum mechanics , engineering
We report on temperature‐dependent differential Hall‐effect and resistivity measurements, between 10 and 300 K, on two Si‐doped GaN epitaxial layers grown by MOCVD on sapphire substrates. These experiments indicate parallel conduction paths in our layers, while depth profiling using plasma‐etching shows that two paths are simultaneously present: an impurity band in the Si‐doped region and a conducting layer at the GaN/sapphire interface.