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Photoluminescence Study of Piezoelectric Polarization in Strained Al x Ga 1—x N/GaN Single Quantum Wells
Author(s) -
Kirilyuk V.,
Hageman P.R.,
Christianen P.C.M.,
Tichelaar F.D.,
Larsen P.K.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<563::aid-pssb563>3.0.co;2-e
Subject(s) - photoluminescence , piezoelectricity , quantum well , electric field , quantum confined stark effect , stark effect , optoelectronics , polarization (electrochemistry) , materials science , condensed matter physics , wide bandgap semiconductor , blueshift , optics , physics , chemistry , laser , composite material , quantum mechanics
We report a low temperature photoluminescence study on two identical Al 0.13 Ga 0.87 N/GaN single quantum wells (QWs), which are pseudomorphically grown on either a GaN or an AlGaN buffer layer. The red shift of the QW emission due to the quantum confined Stark effect, is found to be strongest in the QW deposited on AlGaN, in contrast to what is to be expected form the estimated built‐in electric fields due to spontaneous and piezoelectric polarization fields. Screening of the built‐in electric field by a relatively high sheet charge is one of the possible reasons for the observed discrepancy.