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Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells
Author(s) -
Kuokstis E.,
Zhang Jianping,
Yang J.W.,
Simin G.,
Asif Khan M.,
Gaska R.,
Shur M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<559::aid-pssb559>3.0.co;2-v
Subject(s) - excited state , photoluminescence , polarization (electrochemistry) , blueshift , quantum well , excitation , exciton , electric field , materials science , piezoelectricity , optoelectronics , condensed matter physics , chemistry , atomic physics , physics , optics , laser , quantum mechanics , composite material
We report on UV photoluminescence (PL) dynamics in highly excited quaternary Al x In y Ga 1— x — y N epilayers and multiple quantum wells (MQWs). At low temperature, in MQWs we have observed new PL band which appeared at low excitation on the long‐wave side of the spectrum and we show it to arise from localized carriers (excitons). The strong blue‐shift of PL maximum with excitation intensity in MQWs is caused by localized state filling and screening of piezoelectric and spontaneous polarization electric field.