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Wetting Behaviour of GaN Surfaces with Ga‐ or N‐Face Polarity
Author(s) -
Eickhoff M.,
Neuberger R.,
Steinhoff G.,
Ambacher O.,
Müller G.,
Stutzmann M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<519::aid-pssb519>3.0.co;2-a
Subject(s) - wetting , materials science , contact angle , x ray photoelectron spectroscopy , polarity (international relations) , oxide , surface (topology) , wetting transition , analytical chemistry (journal) , chemical engineering , composite material , chemistry , geometry , metallurgy , chromatography , biochemistry , mathematics , engineering , cell
The wetting behaviour of GaN surfaces with N‐face and Ga‐face polarity and the influence of different surface treatments is studied by measuring the wetting angle of highly purified water by microscopic imaging. We found that wet thermal oxidation of the surface leads to a decreased wetting angle indicating an improved wetting behaviour. The presence of Al in AlN or AlGaN leads to a further reduction of the wetting angle, which is attributed to the presence of Al 2 O 3 on the surface. In addition the comparison of Ga‐ and N‐face material revealed a lower wetting angle for all N‐face samples. XPS analysis showed the enhanced formation of native oxide on the surface with N‐face polarity.