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Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures
Author(s) -
Teisseire M.,
Neu G.,
Morhain C.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<501::aid-pssb501>3.0.co;2-9
Subject(s) - wurtzite crystal structure , exciton , materials science , photoluminescence , heterojunction , excited state , spectroscopy , raman spectroscopy , molecular physics , condensed matter physics , atomic physics , chemistry , optoelectronics , optics , zinc , physics , quantum mechanics , metallurgy
Neutral donor bound excitons (I 2 ) and donor related electronic Raman scattering (ERS) in wurtzite GaN epilayers deposited onto Si, 6H‐SiC, Al 2 O 3 and GaN substrates are studied at low temperature by high‐resolution selective photoluminescence spectroscopy (SPL). Due to the presence of a large strain distribution in the heterostructures, the observation of the I 2 excited states under selective laser excitation is possible from tensile to compressive strain along the [0001] direction. It is shown that the I 2 spectra strongly depend on which valence band (A or B) the bound exciton hole belongs to. Resonant ERS and resonantly excited two‐electron spectra reveal that two main different residual donor species are present both in MBE and MOCVD epitaxial samples. The donor binding energies are shown to vary noticeably with the biaxial strain field.