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Excitonic Transitions in Homoepitaxial GaN
Author(s) -
MartínezCriado G.,
Miskys C.R.,
Cros A.,
Cantarero A.,
Ambacher O.,
Stutzmann M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<497::aid-pssb497>3.0.co;2-r
Subject(s) - photoluminescence , exciton , atmospheric temperature range , condensed matter physics , spectral line , range (aeronautics) , quality (philosophy) , recombination , materials science , energy (signal processing) , physics , optoelectronics , chemistry , quantum mechanics , thermodynamics , biochemistry , gene , composite material
The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose‐Einstein expression instead of Varshni's relationship. Values for the parameters of both semi‐empirical relations describing the energy shift are reported and compared with the literature.