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Exciton Diffusion in GaN Epitaxial Layers
Author(s) -
Rakovich Yu.,
Donegan J.F.,
Gladyshchuk A.,
Yablonskii G.,
Schineller B.,
Heuken M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<493::aid-pssb493>3.0.co;2-6
Subject(s) - exciton , photoluminescence , epitaxy , metalorganic vapour phase epitaxy , diffusion , materials science , sapphire , reflection (computer programming) , spectral line , radiative transfer , crystal (programming language) , substrate (aquarium) , thermal equilibrium , resonance (particle physics) , condensed matter physics , layer (electronics) , molecular physics , optoelectronics , optics , atomic physics , chemistry , laser , physics , nanotechnology , oceanography , astronomy , geology , computer science , thermodynamics , programming language , quantum mechanics
The photoluminescence (PL) and reflection excitonic spectra of GaN epitaxial layers grown on sapphire substrate by MOVPE were measured in the temperature region from 50 to 200 K. A three‐layer model of the crystal was used for fitting the reflection spectrum. In this way the dead layer thickness, resonance energies and the broadening parameters of the free excitons were obtained. These parameters were then used for fitting the PL spectra assuming a thermal equilibrium for excitons. A decrease in the diffusion coefficient and increase in the radiative lifetime of excitons was found with increasing temperature.