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Micro‐Photoluminescence Spectroscopy of Exciton–Polaritons in GaN with the Wave Vector k Normal to the c‐Axis
Author(s) -
Shubina T.V.,
Paskova T.,
Toropov A.A.,
Lebedev A.V.,
Ivanov S.V.,
Monemar B.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<481::aid-pssb481>3.0.co;2-i
Subject(s) - exciton , photoluminescence , polariton , spectroscopy , materials science , molecular physics , exciton polaritons , strain (injury) , condensed matter physics , spectral line , wave vector , chemistry , optoelectronics , physics , quantum mechanics , medicine , astronomy
We report on polarized micro‐photoluminescence (μ‐PL) and micro‐reflectance (μ‐R) studies of GaN layers grown by HVPE. A strong p‐polarized component in the vicinity of A exciton is observed in the μ‐PL and attributed as a mixture of a bound B exciton, dominating at low temperature, and scattered A exciton–polariton states prevailing at higher temperatures. Temperature variation of exciton energies in the μ‐R spectra reveals strain‐induced difference between the top surface and the cleaved edges.