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Optical Properties of III‐Nitride Ternary Compounds
Author(s) -
Baldanzi A.,
Bellotti E.,
Goano M.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/1521-3951(200111)228:2<425::aid-pssb425>3.0.co;2-q
Subject(s) - refractive index , nitride , dielectric function , ternary operation , band gap , dielectric , materials science , alloy , electronic band structure , phase (matter) , function (biology) , index (typography) , optoelectronics , condensed matter physics , physics , nanotechnology , computer science , quantum mechanics , metallurgy , layer (electronics) , evolutionary biology , world wide web , biology , programming language
As a basic step in the evaluation of optical properties of the III‐nitrides, the dielectric function of AlGaN and InGaN has been computed using the information from the full‐band electronic structure in the framework of the random phase approximation. Both real and imaginary parts have been evaluated, and the refractive index has been compared with available parametrizations. Sellmeier coefficients for the refractive index at energies below the band gap have been derived as functions of the alloy composition.